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This breakthrough in wafer-scale growth of monolayer MoSi₂N₄ single crystals addresses a critical bottleneck for scaling two-dimensional semiconductors beyond current silicon limitations. By achieving superior carrier mobility and thermal conductivity compared to MoS₂, the research provides a viable pathway toward high-performance complementary metal-oxide-semiconductor (CMOS) integrated circuits based on 2D materials.

Sources coveringQuantum Zeitgeist, Quantum Computing Report

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Scientists Grow P-Type Semiconductor as Single Crystal Film

Quantum ZeitgeistAugust 28, 20262 min read

Scientists led by Prof. REN Wencai from the Institute of Metal Research (IMR) of the Chinese Academy of Sciences achieved wafer-scale epitaxial growth of monolayer MoSi 2 N 4 single crystals, a high-performance p-type two-dimensional (2D) semiconductor. Published on July 8 in Nature Materials, their findings represent a step toward complementary metal-oxide-semiconductor (CMOS) integrated circuits based on 2D materials.

Published on July 8 in Nature Materials, researchers led by Professor REN Wencai from the Institute of Metal Research of the Chinese Academy of Sciences report achieving wafer-scale growth of monolayer MoSi₂N₄…

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