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This partnership focuses on overcoming manufacturing hurdles for IBM's 3D nanosheet transistors, a critical step toward scaling AI hardware density and energy efficiency at the 7-angstrom node and beyond. By integrating Siemens' electronic design automation with IBM's device innovation, the collaboration aims to refine lithography and simulation techniques required for mass production of these advanced chips.

Source coveringThe Quantum Insider

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IBM and Siemens Collaborate to Advance 3D Nanostack Transistors

The Quantum InsiderOctober 14, 20263 min read

Insider Brief PRESS RELEASE — Today, IBM (NYSE: IBM), in collaboration with Siemens, announced new research aimed at advancing IBM’s nanostack architecture, a new transistor architecture unveiled by IBM earlier this year. The collaboration will bring together IBM’s leadership in semiconductor device innovation and Siemens’ expertise in electronic design automation (EDA), process simulation, lithography optimization, and […]

IBM and Siemens are collaborating to advance IBM’s 3D nanostack transistor architecture, focusing on design, simulation, lithography and manufacturing preparation. IBM says the current 7-angstrom design uses vertically stacked, staggered nanosheet transistors and could improve chip density, energy efficiency, performance and SRAM scaling. The companies will develop…

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