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Cornell researchers have successfully reduced the deposition temperature for tantalum films to 200°C by utilizing krypton gas during nanofabrication. This breakthrough resolves a critical manufacturability bottleneck for superconducting qubits while maintaining high electronic conductivity on standard silicon substrates. By aligning quantum material processing with existing semiconductor infrastructure, this advancement paves the way for scalable production of next-generation quantum chips.

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Cornell’s quantum tantalum chip cuts heat by 200°C using krypton gas

Quantum ZeitgeistAugust 19, 20264 min read

Cornell researchers lowered tantalum deposition temps to 200°C using krypton gas, improving conductivity for potential use in future quantum computing devices.

Cornell researchers have lowered the temperature required to deposit tantalum, a promising material for quantum computing, by 200°C to 200°C, using krypton gas during nanofabrication. This process allows for deposition on silicon, a standard substrate, and results in thin films with substantially higher electronic conductivity. “Tantalum as a material has been shown to be very exciting from a device performance perspective, but its manufacturability had some question marks,” said Valla Fatemi,…

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