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Cornell researchers have successfully reduced the deposition temperature for tantalum superconducting qubits from over 400°C to 200°C by substituting argon with krypton gas during sputtering. This breakthrough resolves a critical manufacturing bottleneck, enabling integration into standard commercial semiconductor foundry processes without damaging underlying CMOS circuits or causing material intermixing. The resulting devices demonstrate high-quality factors exceeding 16 million, marking a significant step toward scalable quantum processing units (QPUs).

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Cornell Researchers Lower Tantalum Qubit Deposition Temperature to 200°C Using Krypton Gas Sputtering

Quantum Computing ReportAugust 19, 20262 min read

A research team led by Cornell University Assistant Professor Valla Fatemi has developed a low-temperature fabrication process for tantalum-based superconducting qubits, resolving a major manufacturing bottleneck for superconducting quantum processing units (QPUs). Detailed in Nature Materials ("Krypton-sputtered tantalum films for scalable high-performance quantum devices"), the team substituted standard argon gas with krypton gas during magnetron [...] The post Cornell Researchers Lower Tantalum Qubit Deposition Temperature to 200°C Using Krypton Gas Sputtering appeared first on Quantum Computing Report.

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