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This breakthrough addresses the "Boltzmann tyranny" by introducing a 2D quantum-tunnelling transistor that operates below the conventional switching voltage limit, offering a fundamental path toward energy-efficient AI hardware. The device demonstrates scalable fabrication on silicon substrates while maintaining high output current and strong ON/OFF ratios, directly targeting the physical bottlenecks hindering next-generation computing power.
Quantum-Tunnelling Field-Effect Transistor Designed to Overcome Integrated-Circuit Chip Development Barriers
Insider Brief PRESS RELEASE — The next generation of microelectronics relies on radical improvements in transistor switching performance to advance computing power. However, conventional semiconductor technology has hit a physical limit known as the “Boltzmann tyranny,” which restricts the energy efficiency of traditional transistors and stalls progress in high-performance electronics. To address this key bottleneck, a research […]
A PolyU-led team developed a 2D tunnelling transistor that could support faster, more energy-efficient computing and AI chips. The Bi/InSe device operated below the conventional 60-millivolt switching limit across six orders of magnitude while requiring a gate-voltage range of just 160 millivolts. The transistor combined high output current with a strong ON/OFF ratio and was produced on centimetre-scale silicon substrates using a potentially scalable manufacturing…
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