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This breakthrough utilizes 2D material heterostructures to bypass the Boltzmann tyranny via quantum tunnelling, directly addressing the energy efficiency bottlenecks that currently constrain next-generation AI chip architectures. By enabling ultra-low-power operation below traditional voltage thresholds, this research provides a critical pathway for scaling integrated circuits required for advanced artificial intelligence workloads.
Hong Kong PolyU’s quantum leap overcomes a key barrier to AI chips

Researchers at The Hong Kong Polytechnic University (PolyU) developed a new transistor using 2D materials, overcoming a key efficiency barrier.
Researchers at The Hong Kong Polytechnic University (PolyU) have engineered a new transistor that operates with a gate-voltage range of only 160 mV, a substantial reduction from the 800 mV traditionally required. The team, led by Jianhua Hao, Head at PolyU, overcame the…
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