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The paper uses individual silicon carbide color centers as room-temperature quantum sensors to map charge noise and trace it to the native oxide layer. It is a solid-state quantum metrology result rather than a computing or communications one, so the closest fit is the broad quantum-hardware bucket. Readers should note that the work is a materials and sensing study, with practical value for third-generation semiconductor interfaces and spin-defect platforms, not a step toward quantum processors.
Quantum Noise Spectroscopy of Nanoscale Charge Defects in Silicon Carbide at Room Temperature
arXiv:2512.22521v2 Announce Type: replace Abstract: The nanoscale charge environment critically influences the performance of semiconductor devices, yet traditional characterization techniques usually lack the spatial resolution to resolve nanoscale charge heterogeneity and identify microscopic noise sources. Here, we address this critical gap by utilizing individual PL5 color centers in commercial silicon carbide as room-temperature, broadband (near-DC to GHz) quantum spectrometers. We report the first real-time, nanoscale observation of single-charge tunneling dynamics at room temperature in 4H-SiC by monitoring the random telegraph noise using optically detected magnetic resonance (ODMR). This capability enables an electrical noise imaging technique that shows distinct noise variations on different wafers. Employing dynamical decoupling and $T_1$ relaxation spectroscopy, we observe correlations of noise spectral density across frequency bands and obtain the nanoscale electron paramagnetic resonance (EPR) fingerprint of spin defects in SiC. Ultimately, through surface chemical engineering, we identify the native oxide layer as the main source of resolved electromagnetic fluctuations. This work establishes a versatile atomic-scale metrology platform bridging quantum sensing and semiconductor engineering, offering critical insights for optimizing third-generation semiconductor interfaces and advancing solid-state quantum technologies.
Abstract:The nanoscale charge environment critically influences the performance of semiconductor devices, yet traditional characterization techniques usually lack the spatial resolution to resolve nanoscale charge heterogeneity and identify microscopic noise sources. Here, we address this critical gap by utilizing individual PL5 color centers in commercial silicon carbide as room-temperature, broadband (near-DC to GHz) quantum spectrometers. We report the first real-time, nanoscale observation of single-charge tunneling dynamics at room temperature in 4H-SiC by monitoring the random telegraph noise using optically detected magnetic resonance (ODMR). This capability enables an electrical noise imaging technique that shows distinct noise variations on different wafers. Employing dynamical decoupling and $T_1$ relaxation spectroscopy, we observe correlations of noise spectral density across frequency bands and obtain the nanoscale electron paramagnetic resonance (EPR) fingerprint of spin defects in SiC. Ultimately, through surface chemical engineering, we identify the native oxide layer as the main source of resolved electromagnetic fluctuations. This work establishes a versatile atomic-scale metrology platform bridging quantum sensing and semiconductor engineering, offering critical insights for optimizing third-generation semiconductor interfaces and advancing solid-state quantum technologies.
Quantum Physics (quant-ph); Materials Science (cond-mat.mtrl-sci)
arXiv:2512.22521 [quant-ph]
(or arXiv:2512.22521v2 [quant-ph] for this version)
https://doi.org/10.48550/arXiv.2512.22521 Focus to learn more arXiv-issued DOI via DataCite
Sci. Adv. 12, eaej5462 (2026)
https://doi.org/10.1126/sciadv.aej5462 Focus to learn more DOI(s) linking to related resources
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