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This research proposes a novel switchable heavy-hole/light-hole spin qubit in bilayer Ge heterostructures that dynamically combines the robust coherence of heavy-hole states with the fast control capabilities of light-hole states. By enabling shuttling between these regimes, the design achieves Rabi frequencies comparable to pure light-hole systems while extending coherence times by over tenfold through optimized noise sweet spots. This advancement addresses a critical bottleneck in hole-spin qubit architectures by offering a unified platform for both high-fidelity storage and rapid manipulation.
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Switchable heavy-hole/light-hole spin qubit

arXiv2 min read

arXiv:2608.25914v1 Announce Type: cross Abstract: Compressively strained Ge quantum wells in planar SiGe/Ge heterostructures are the state-of-the-art platform for hole spin qubits. While they exhibit robust coherence times, they possess weak intrinsic spin-orbit interaction (SOI) due to the heavy-hole (HH) character of the wavefunction. Recently, light-hole (LH) qubits were proposed in GeSn/Ge heterostructures, offering strong, intrinsic, linear-in-momentum SOI. In this work, we propose a switchable HH-LH spin qubit in a bilayer Ge heterostructure with SiGeSn barriers, combining the advantages of HH and LH devices. The character of the qubit can be changed by shuttling from an LH well to an HH well, which also enables fast, hopping-based single-qubit rotations. Additionally, we observe an HH-LH resonance introduced by the in-plane confinement, resulting in $g$-factor peaks and first-order charge noise sweet spots. Our calculations reveal a sweet spot with Rabi frequencies on the order of 100 MHz, comparable to the LH regime, but with a more than tenfold increase in coherence time, on the order of 100 $\mu$s.

Abstract:Compressively strained Ge quantum wells in planar SiGe/Ge heterostructures are the state-of-the-art platform for hole spin qubits. While they exhibit robust coherence times, they possess weak intrinsic spin-orbit interaction (SOI) due to the heavy-hole (HH) character of the wavefunction. Recently, light-hole (LH) qubits were proposed in GeSn/Ge heterostructures, offering strong, intrinsic, linear-in-momentum SOI. In this work, we propose a switchable HH-LH spin qubit in a bilayer Ge heterostructure with SiGeSn barriers, combining the advantages of HH and LH devices. The character of the qubit can be changed by shuttling from an LH well to an HH well, which also enables fast, hopping-based single-qubit rotations. Additionally, we observe an HH-LH resonance introduced by the in-plane confinement, resulting in $g$-factor peaks and first-order charge noise sweet spots. Our calculations reveal a sweet spot with Rabi frequencies on the order of 100 MHz, comparable to the LH regime, but with a more than tenfold increase in coherence time, on the order of 100 $\mu$s.

Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Quantum Physics (quant-ph)

arXiv:2608.25914 [cond-mat.mes-hall]

(or arXiv:2608.25914v1 [cond-mat.mes-hall] for this version)

https://doi.org/10.48550/arXiv.2608.25914 Focus to learn more arXiv-issued DOI via DataCite (pending registration)

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Full text under the publisher's open licence · 260 words

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