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Researchers have computationally identified ultrathin calcium and strontium oxides as viable candidates for sub-5nm FETs, offering a pathway to overcome scaling limits while meeting both high-performance and low-power criteria. By leveraging ab initio physics calculations to predict material behavior at the atomic scale, this approach bypasses the need for immediate physical fabrication of quantum-dominant structures. The findings significantly expand the material options for next-generation CMOS technology, addressing critical hurdles in density and power consumption.

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Sub-1-nm Oxides Screened for Future Sub-5-nm FET Applications

Quantum ZeitgeistJune 3, 20263 min read

Researchers computationally screened materials thinner than 1-nm, focusing on oxide semiconductors for use in future sub-5-nm FETs and CMOS.

Researchers are now screening oxide semiconductors with thicknesses below one nanometer, a scale rapidly approaching the atomic level, to identify materials suitable for future computer chips. This work focuses specifically on materials for field-effect transistors (FETs) with dimensions below 5nm, as current technology nears the limits of its scaling potential. The team employs a method relying on fundamental physics calculations before physical…

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