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This research presents a quantum theoretical framework for generating strong photocurrents in two-dimensional electron gases under magnetic fields, offering significantly higher efficiency than graphene-based detectors for microwave and terahertz radiation detection. The study proposes specific experimental geometries using III-V semiconductor structures to realize these high-velocity edge states as sensitive sensors, advancing the practical application of fundamental quantum transport phenomena.
Strong photoresponse of edge two-dimensional electrons in a magnetic field
arXiv:2608.13811v1 Announce Type: cross Abstract: Electrons in two-dimensional electron gases in the presence of an out-of-plane magnetic field propagate along the edge with a high velocity of the order of the Fermi velocity. Under microwave and terahertz radiation, photon absorption by these electrons provides a pathway to realising sensitive radiation detection. Here, we develop a detailed quantum theory of the photocurrent generated in such a system by an incident electromagnetic wave and propose an experimental geometry for observing the predicted phenomenon. By using suitably arranged radiation confinement structures, a strong photocurrent generation efficiency can be obtained. We also demonstrate that the resulting photoresponse in III-V semiconductor structures can be orders of magnitude higher than that measured in graphene.
Abstract:Electrons in two-dimensional electron gases in the presence of an out-of-plane magnetic field propagate along the edge with a high velocity of the order of the Fermi velocity. Under microwave and terahertz radiation, photon absorption by these electrons provides a pathway to realising sensitive radiation detection. Here, we develop a detailed quantum theory of the photocurrent generated in such a system by an incident electromagnetic wave and propose an experimental geometry for observing the predicted phenomenon. By using suitably arranged radiation confinement structures, a strong photocurrent generation efficiency can be obtained. We also demonstrate that the resulting photoresponse in III-V semiconductor structures can be orders of magnitude higher than that measured in graphene.
Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Applied Physics (physics.app-ph); Optics (physics.optics); Quantum Physics (quant-ph)
arXiv:2608.13811 [cond-mat.mes-hall]
(or arXiv:2608.13811v1 [cond-mat.mes-hall] for this version)
https://doi.org/10.48550/arXiv.2608.13811 Focus to learn more arXiv-issued DOI via DataCite (pending registration)
https://doi.org/10.1103/nbrg-gllb Focus to learn more DOI(s) linking to related resources
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