aiqbench analysis
This paper establishes a standardized scanning probe microscopy framework to quantify sidewall roughness in superconducting qubits, addressing a critical gap in fabrication metrology. By introducing refined descriptors like curvature-equivalent radius, the work enables cross-laboratory comparisons essential for isolating geometry-induced performance variations in quantum processors.
Sidewall Metrology Protocol for Superconducting Qubit Devices
arXiv:2610.26223v1 Announce Type: new Abstract: Sidewall morphology is a potentially important factor influencing superconducting qubit performance, yet its quantitative characterization remains challenging due to the absence of standardized measurement protocols. In this work, we develop a scanning probe microscopy-based measurement framework for the quantitative characterization of superconducting qubit sidewalls. The framework introduces a refined root mean square lateral sidewall roughness descriptor and a new curvature-equivalent radius for quantifying vertical sidewall morphology. The descriptors and measurement procedures are applied to different components of qubit devices, forming the basis of a proposed sidewall characterization protocol. This provides a foundation for quantitative comparisons of fabrication processes across laboratories, enabling future investigations of correlations between sidewall geometry and qubit performance.
Authors:Jørgen Garnæs, Henrik S. Guttesen, Astrid T. Rømer, Oscar Danielsson, Emily P. Duggan, Zhenhai Sun, Asen Lyubenov Georgiev, Li Wei Chang, Morten Kjaergaard, Mark Bieler, Lukas Grünhaupt, Sabbir A. Khan
Abstract:Sidewall morphology is a potentially important factor influencing superconducting qubit performance, yet its quantitative characterization remains challenging due to the absence of standardized measurement protocols. In this work, we develop a scanning probe microscopy-based measurement framework for the quantitative characterization of superconducting qubit sidewalls. The framework introduces a refined root mean square lateral sidewall roughness descriptor and a new curvature-equivalent radius for quantifying vertical sidewall morphology. The descriptors and measurement procedures are applied to different components of qubit devices, forming the basis of a proposed sidewall characterization protocol. This provides a foundation for quantitative comparisons of fabrication processes across laboratories, enabling future investigations of correlations between sidewall geometry and qubit performance.
Quantum Physics (quant-ph); Materials Science (cond-mat.mtrl-sci); Superconductivity (cond-mat.supr-con)
arXiv:2610.26223 [quant-ph]
(or arXiv:2610.26223v1 [quant-ph] for this version)
Full text under the publisher's open licence · 157 words
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