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This research demonstrates a scalable method for fabricating diamond films with 3D layered structures of nitrogen-vacancy centers, directly addressing the need for high-density spin arrays in quantum processors and memory. By utilizing cyclic CVD growth and plasma etching, the study achieves uniform NV bond arrangements that are critical for improving coherence and control in emerging quantum devices. The work represents a significant step forward in materials engineering for practical quantum hardware rather than incidental AI applications.
Self-organized Layered Structures of Nitrogen-Vacancy Centers with Preferential Orientation in Heteroepitaxial Diamond Films
arXiv:2610.03150v1 Announce Type: new Abstract: Here, we report the fabrication and characterization of single crystal diamond films on a two-inch wafer-scale containing three-dimensional layered structures of negatively charged nitrogen-vacancy color centers (NV$^{-}$). The (100)-oriented layered diamond films were grown by chemical vapor deposition (CVD) to create spatially separated regions of enhanced emission associated with NV$^{-}$ centers. Such localized emission enhancement as well as 2D and 3D arrays of spins could enable close-packed architectures for emerging quantum devices, such as data processors, memory cells, and magnetic sensors. A cyclic sequence of CVD growth and oxygen-plasma etching is employed, resulting in the in-situ formation of layered inverted pyramidal structures with flat $\{$111$\}$ sidewalls. These pits are subsequently overgrown by nitrogen-doped diamond to achieve NV$^{-}$-rich facets with a uniform N-V bond arrangement and improved nitrogen incorporation efficiency.
Abstract:Here, we report the fabrication and characterization of single crystal diamond films on a two-inch wafer-scale containing three-dimensional layered structures of negatively charged nitrogen-vacancy color centers (NV$^{-}$). The (100)-oriented layered diamond films were grown by chemical vapor deposition (CVD) to create spatially separated regions of enhanced emission associated with NV$^{-}$ centers. Such localized emission enhancement as well as 2D and 3D arrays of spins could enable close-packed architectures for emerging quantum devices, such as data processors, memory cells, and magnetic sensors. A cyclic sequence of CVD growth and oxygen-plasma etching is employed, resulting in the in-situ formation of layered inverted pyramidal structures with flat $\{$111$\}$ sidewalls. These pits are subsequently overgrown by nitrogen-doped diamond to achieve NV$^{-}$-rich facets with a uniform N-V bond arrangement and improved nitrogen incorporation efficiency.
Quantum Physics (quant-ph); Materials Science (cond-mat.mtrl-sci); Optics (physics.optics)
arXiv:2610.03150 [quant-ph]
(or arXiv:2610.03150v1 [quant-ph] for this version)
https://doi.org/10.48550/arXiv.2610.03150 Focus to learn more arXiv-issued DOI via DataCite (pending registration)
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Full text under the publisher's open licence · 228 words
