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This research introduces SCALE, a framework that leverages self-supervised learning and Vision-Language Models to address design-rule violations in sub-2nm semiconductor place-and-route flows. By converting complex multi-layer layout geometries into structured text for fine-tuning domain-specific models, the approach significantly improves violation repair rates on real-world advanced node cases where general-purpose AI lacks necessary geometric reasoning.
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SCALE: Self-Supervised Constraint-Aware Layout GEneration for Local P&R DRV Fixing at Advanced Nodes

arXiv3 min read

arXiv:2607.21850v1 Announce Type: cross Abstract: As semiconductor manufacturing advances toward sub-2nm nodes, local place-and-route (P&R) design-rule violation (DRV) fixing is increasingly limited by complex rule interactions, dense multi-layer routing geometries, and foundry-specific constraints. While Large Language Models (LLMs) have recently demonstrated strong capabilities in EDA scripting and documentation, their application to visual layout understanding remains largely unexplored: diagnosing DRC violations from layout imagery demands precise geometric reasoning and foundry-specific rule knowledge absent from general-purpose VLM training. We propose SCALE, a framework with a self-supervised layout-generation stage for local DRV fixing at advanced nodes. Multi-layer layout geometry is serialized into structured text, and a fine-tuned language model learns to reconstruct randomly masked polygons from surrounding BEOL context alone without violation labels. At inference, natural-language rule constraints and high-temperature sampling steer generation toward diverse, violation-prone layout variants validated by an industrial signoff DRC checker, producing DRC-annotated layout--violation pairs used to fine-tune a domain-adapted DRC-VLM. This VLM provides rule-aware geometric guidance for local DRV repair, boosting state-of-the-art agents' solve rates by +12--25% (up to 97%) on 100 real sub-2nm cases spanning enclosure, spacing, width, and color-spacing violations.

Abstract:As semiconductor manufacturing advances toward sub-2nm nodes, local place-and-route (P&R) design-rule violation (DRV) fixing is increasingly limited by complex rule interactions, dense multi-layer routing geometries, and foundry-specific constraints. While Large Language Models (LLMs) have recently demonstrated strong capabilities in EDA scripting and documentation, their application to visual layout understanding remains largely unexplored: diagnosing DRC violations from layout imagery demands precise geometric reasoning and foundry-specific rule knowledge absent from general-purpose VLM training. We propose SCALE, a framework with a self-supervised layout-generation stage for local DRV fixing at advanced nodes. Multi-layer layout geometry is serialized into structured text, and a fine-tuned language model learns to reconstruct randomly masked polygons from surrounding BEOL context alone without violation labels. At inference, natural-language rule constraints and high-temperature sampling steer generation toward diverse, violation-prone layout variants validated by an industrial signoff DRC checker, producing DRC-annotated layout--violation pairs used to fine-tune a domain-adapted DRC-VLM. This VLM provides rule-aware geometric guidance for local DRV repair, boosting state-of-the-art agents' solve rates by +12--25% (up to 97%) on 100 real sub-2nm cases spanning enclosure, spacing, width, and color-spacing violations.

Computer Vision and Pattern Recognition (cs.CV); Artificial Intelligence (cs.AI)

arXiv:2607.21850 [cs.CV]

(or arXiv:2607.21850v1 [cs.CV] for this version)

https://doi.org/10.48550/arXiv.2607.21850 Focus to learn more arXiv-issued DOI via DataCite (pending registration)

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Full text under the publisher's open licence · 279 words

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