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This study demonstrates a significant breakthrough in solid-state quantum hardware by achieving room-temperature storage of entanglement using silicon carbide nodes, effectively extending coherence lifetimes by a factor of 240 through nuclear-spin memory transfer. The deterministic generation of high-fidelity multi-qubit registers validates shallow color centers as a scalable platform for practical quantum sensing and processing without cryogenic constraints. These results advance the feasibility of deploying robust quantum technologies in ambient environments, addressing a fundamental bottleneck in solid-state qubit architectures.
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Room-Temperature Storage of Entanglement in a Silicon Carbide Quantum Node

arXiv3 min read

arXiv:2609.13744v1 Announce Type: new Abstract: Robust entanglement at room temperature is a central challenge for solid-state quantum information processing and quantum-enhanced sensing. Here we demonstrate room-temperature storage of entanglement in a silicon carbide (SiC) quantum node by coherently transferring an electron-nuclear entangled state onto long-lived nuclear-spin memory qubits. Using a shallow single color center in 4H-SiC, conventionally denoted PL6, we realize a fully addressable three-qubit register composed of one electron-spin processor and two strongly coupled $^{29}$Si nuclear-spin memory qubits. This platform enables the deterministic generation of high-fidelity entangled states, including a nuclear-spin Bell state with a fidelity of $94 \pm 2\%$ and a three-qubit Greenberger-Horne-Zeilinger (GHZ)-type state with a fidelity of $89 \pm 4\%$. By implementing a SWAP-gate protocol in the strong hyperfine-coupling regime, the electron-nuclear entanglement is transferred to the nuclear-spin memory with a fidelity of $92.5 \pm 2.5\%$, extending the entanglement lifetime by a factor of 240. We further confirm the generality of this approach in an additional heterogeneous $^{29}$Si-$^{13}$C nuclear-spin register and, through a statistical survey of 200 single PL6 centers, show that multi-nuclear-spin registers occur naturally with probabilities above 10%. These results position shallow SiC color centers as a powerful platform for entanglement-assisted quantum sensing and scalable room-temperature quantum technologies.

Abstract:Robust entanglement at room temperature is a central challenge for solid-state quantum information processing and quantum-enhanced sensing. Here we demonstrate room-temperature storage of entanglement in a silicon carbide (SiC) quantum node by coherently transferring an electron-nuclear entangled state onto long-lived nuclear-spin memory qubits. Using a shallow single color center in 4H-SiC, conventionally denoted PL6, we realize a fully addressable three-qubit register composed of one electron-spin processor and two strongly coupled $^{29}$Si nuclear-spin memory qubits. This platform enables the deterministic generation of high-fidelity entangled states, including a nuclear-spin Bell state with a fidelity of $94 \pm 2\%$ and a three-qubit Greenberger-Horne-Zeilinger (GHZ)-type state with a fidelity of $89 \pm 4\%$. By implementing a SWAP-gate protocol in the strong hyperfine-coupling regime, the electron-nuclear entanglement is transferred to the nuclear-spin memory with a fidelity of $92.5 \pm 2.5\%$, extending the entanglement lifetime by a factor of 240. We further confirm the generality of this approach in an additional heterogeneous $^{29}$Si-$^{13}$C nuclear-spin register and, through a statistical survey of 200 single PL6 centers, show that multi-nuclear-spin registers occur naturally with probabilities above 10%. These results position shallow SiC color centers as a powerful platform for entanglement-assisted quantum sensing and scalable room-temperature quantum technologies.

arXiv:2609.13744 [quant-ph]

(or arXiv:2609.13744v1 [quant-ph] for this version)

https://doi.org/10.48550/arXiv.2609.13744 Focus to learn more arXiv-issued DOI via DataCite (pending registration)

Phys. Rev. Lett. 137, 100803 (2026)

https://doi.org/10.1103/454t-n78h Focus to learn more DOI(s) linking to related resources

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