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Researchers have demonstrated that a mere 2% indium doping in tin telluride nanowires induces superconductivity, offering a promising *in situ* fabrication route for topological superconductors essential to quantum computing. However, the study notes that competing electrical pathways currently mask fully topologically protected states, indicating that refining these material growth techniques remains critical before practical implementation.

Source coveringQuantum Zeitgeist

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Researchers Find Superconductivity with 2% Indium Doping

Quantum ZeitgeistOctober 9, 20264 min read

An astonishingly small concentration of just two per cent indium can induce superconductivity up to several Kelvins when alloyed with tin telluride. This work demonstrates a new method for creating these induced superconducting materials directly during deposition, offering a potential route towards more reliable quantum devices. However, realising fully topologically protected states requires suppressing competing electrical pathways within the material itself.

Superconductivity occurs within selectively grown tin telluride nanowires deposited on indium phosphide; previously, inducing such behaviour required alternative methods. This breakthrough stems from indium diffusing upwards from the substrate into the SnTe during growth, forming a superconducting compound with an indium concentration as low as 2 percent. A new platform is now available for realising *in situ* deposited topological superconductors once trivial bulk states are depleted, improving upon existing techniques. Superconductivity, the flow of electricity without any resistance, has…

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