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Researchers Control Spin Traffic Using Electric Fields

Quantum ZeitgeistNovember 2, 20264 min read

Positive *and* negative changes in magnetic resistance can now be controlled electrically within a single material, defying expectations for layered antiferromagnets like chromium sulfide bromide. Until now, tuning magnetoresistance relied on altering carrier density through doping; this work demonstrates it’s primarily dictated by manipulating internal electric fields instead. This clarifies how gating modulates spin currents, opening new avenues to design advanced spintronic devices beyond what was previously possible.

Controlling spin transport electrically is key for developing new spintronic devices; manipulating the displacement field, rather than changing carrier density through doping, offers greater control over magnetoresistance in layered chromium sulfur bromide (CrSBr) semiconductors. By fabricating a dual-gate transistor architecture using CrSBr, researchers identified how both positive and negative components of magnetoresistance originate from interlayer and intralayer spin mechanisms. Manipulating the “displacement field”, a measure of electrical polarisation within a material, enables more precise electron flow regulation compared to altering charge…

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