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This research demonstrates the use of programmable analog quantum annealers to simulate and probe complex magnetic hysteresis in antiferromagnetic models, revealing emergent domains mediated by quantum fluctuations. By implementing a sampling-based protocol with transverse fields, the study provides empirical evidence for counterintuitive magnetic memory effects that are difficult to capture on classical systems. The findings advance our understanding of strongly correlated electron dynamics and validate specific annealing hardware capabilities in condensed matter physics simulations.
Probing Antiferromagnetic Hysteresis on Programmable Quantum Annealers
arXiv:2511.17779v2 Announce Type: replace Abstract: Using programmable analog quantum annealing processors, we implement a sampling-based magnetic hysteresis protocol to probe the counterintuitive notion of magnetic memory in antiferromagnetic models. A key component of this protocol responsible for the hysteresis is a transverse field, which enables state transitions, while the longitudinal magnetic field sweep is done via a longitudinal control field. We observe intriguing non-monotonic magnetization, alongside full saturation and reversal of the hysteresis curve, Barkhausen-like noise, as well as emergent magnetic domains mediated by quantum fluctuations that give rise to the magnetic memory effect in antiferromagnets.
Abstract:Using programmable analog quantum annealing processors, we implement a sampling-based magnetic hysteresis protocol to probe the counterintuitive notion of magnetic memory in antiferromagnetic models. A key component of this protocol responsible for the hysteresis is a transverse field, which enables state transitions, while the longitudinal magnetic field sweep is done via a longitudinal control field. We observe intriguing non-monotonic magnetization, alongside full saturation and reversal of the hysteresis curve, Barkhausen-like noise, as well as emergent magnetic domains mediated by quantum fluctuations that give rise to the magnetic memory effect in antiferromagnets.
Quantum Physics (quant-ph); Other Condensed Matter (cond-mat.other); Statistical Mechanics (cond-mat.stat-mech); Strongly Correlated Electrons (cond-mat.str-el); Computational Physics (physics.comp-ph)
arXiv:2511.17779 [quant-ph]
(or arXiv:2511.17779v2 [quant-ph] for this version)
Full text under the publisher's open licence · 116 words
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