aiqbench analysis
This study demonstrates how physics-guided machine learning models can effectively prescreen point defects in 4H-SiC, offering a viable alternative to costly density-functional theory calculations for identifying quantum-relevant zero-phonon lines. While performance varies between defect types—with vacancies and substitutions showing errors low enough to potentially replace traditional simulations—the approach significantly accelerates high-throughput workflows essential for advancing quantum materials research.
Prescreening Point Defects in Semiconductors With Machine Learning
arXiv:2609.14846v1 Announce Type: cross Abstract: High-throughput calculations using density-functional theory (DFT) are commonly used to explore point defects for applications in power electronics and quantum technologies. There is currently a major shift away from these traditional simulation techniques towards machine learning (ML) methods. We explore a class of physics-guided ML models for predicting defect formation energies and zero-phonon lines (ZPL) to identify point defects for quantum applications. The models are specifically targeted for use in a prescreening step for accelerated high-throughput workflows, and are therefore designed to avoid the costly relaxation step typically present with ML interatomic potentials (MLIPs). We compare performance for single and double point defect systems in 4H-SiC with ridge, kernel ridge, and multilayer perceptron (MLP) models using three different descriptors representing the defect systems. For vacancies and substitutions, the optimized models give mean absolute errors (MAEs) of 0.437 eV for the formation energy and 0.202 eV for ZPLs, which is just above the level at which such predictions can be useful even beyond the targeted prescreening, i.e., in some applications they may completely replace the need for costly DFT calculations. For interstitials the MAEs are larger, 1.101 eV for the formation energy and 0.230 eV for the ZPL, which, while still useful for prescreening, will not generally be useful for more detailed characterization. Hence, while the results may be further improved by model design and optimization, the models presented in this work are already useful for prescreening in high-throughput characterization of point defects.
Abstract:High-throughput calculations using density-functional theory (DFT) are commonly used to explore point defects for applications in power electronics and quantum technologies. There is currently a major shift away from these traditional simulation techniques towards machine learning (ML) methods. We explore a class of physics-guided ML models for predicting defect formation energies and zero-phonon lines (ZPL) to identify point defects for quantum applications. The models are specifically targeted for use in a prescreening step for accelerated high-throughput workflows, and are therefore designed to avoid the costly relaxation step typically present with ML interatomic potentials (MLIPs). We compare performance for single and double point defect systems in 4H-SiC with ridge, kernel ridge, and multilayer perceptron (MLP) models using three different descriptors representing the defect systems. For vacancies and substitutions, the optimized models give mean absolute errors (MAEs) of 0.437 eV for the formation energy and 0.202 eV for ZPLs, which is just above the level at which such predictions can be useful even beyond the targeted prescreening, i.e., in some applications they may completely replace the need for costly DFT calculations. For interstitials the MAEs are larger, 1.101 eV for the formation energy and 0.230 eV for the ZPL, which, while still useful for prescreening, will not generally be useful for more detailed characterization. Hence, while the results may be further improved by model design and optimization, the models presented in this work are already useful for prescreening in high-throughput characterization of point defects.
Materials Science (cond-mat.mtrl-sci); Machine Learning (cs.LG)
arXiv:2609.14846 [cond-mat.mtrl-sci]
(or arXiv:2609.14846v1 [cond-mat.mtrl-sci] for this version)
https://doi.org/10.48550/arXiv.2609.14846 Focus to learn more arXiv-issued DOI via DataCite (pending registration)
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