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This study demonstrates a method to trigger ultrafast metal-insulator transitions in 2D moiré devices using photoexcitation, offering potential pathways for next-generation quantum logic switches and neuromorphic computing components. The ability to manipulate electron flow states on such short timescales is critical for advancing practical applications of correlated electronic systems beyond current silicon limits.
Photoexcitation flips 2D moiré devices from metals to insulators in ultrafast test
Quantum materials, materials with properties that are governed by the laws of quantum mechanics describing many-body interactions, have proved promising for the development of various advanced technologies. Many of these materials undergo so-called phase transitions, switching between different physical states that alter how electrons flow through them.
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