Origins of microwave losses in superconducting circuits made with silicon-on-insulator substrates

arXiv:2607.29154v1 Announce Type: cross Abstract: Silicon-on-insulator technology is widely used to fabricate silicon based devices, from advanced transistors to photonic circuits or nanomechanical systems. Integrating low loss superconducting quantum circuits with silicon-on-insulator substrates enables to couple the advantages offered by the mature silicon technology to the exquisite sensitivity of superconducting circuits. The natural approach, inherited from research in superconducting microwave devices, is to use a substrate made with highly resistive silicon, known for its low level of microwave losses. In this work, using superconducting microwave resonators, we show that counterintuitively, standard resistivity silicon-on-insulator substrates perform better than high resistivity silicon-on-insulator substrates at cryogenic temperatures. In the latter case, the presence of a parasitic sheet conduction at the interface between bulk silicon and silicon oxide acts as the dominant loss mechanism. This parasitic sheet can be suppressed using substrates with intentionally induced traps. In such substrates, losses are ultimately limited by the dielectric losses of the silicon oxide layer. These substrates offer interesting perspectives for the development of superconducting nanoelectromechanical systems. First, the release, i.e. the removal of the silicon oxide, could be limited to the moving parts, thereby maintaining the mechanical integrity of the rest of the device. Additionally, such structure would enhance heat evacuation into the bulk of the substrate which is an issue in current devices such as microwave-to-optics converters.

Authors:Simon Messelot, Nicolas Aparicio, Kazi Rafsanjani Amin, Eric Eyraud, Bruno Fain, Mikaël Cassé, Guillaume Jourdan, Fabrice Nemouchi, Sébastien Hentz, Frédéric Gustavo, François Lefloch, Nicolas Roch, Jérémie J. Viennot, Julien Renard

Abstract:Silicon-on-insulator technology is widely used to fabricate silicon based devices, from advanced transistors to photonic circuits or nanomechanical systems. Integrating low loss superconducting quantum circuits with silicon-on-insulator substrates enables to couple the advantages offered by the mature silicon technology to the exquisite sensitivity of superconducting circuits. The natural approach, inherited from research in superconducting microwave devices, is to use a substrate made with highly resistive silicon, known for its low level of microwave losses. In this work, using superconducting microwave resonators, we show that counterintuitively, standard resistivity silicon-on-insulator substrates perform better than high resistivity silicon-on-insulator substrates at cryogenic temperatures. In the latter case, the presence of a parasitic sheet conduction at the interface between bulk silicon and silicon oxide acts as the dominant loss mechanism. This parasitic sheet can be suppressed using substrates with intentionally induced traps. In such substrates, losses are ultimately limited by the dielectric losses of the silicon oxide layer. These substrates offer interesting perspectives for the development of superconducting nanoelectromechanical systems. First, the release, i.e. the removal of the silicon oxide, could be limited to the moving parts, thereby maintaining the mechanical integrity of the rest of the device. Additionally, such structure would enhance heat evacuation into the bulk of the substrate which is an issue in current devices such as microwave-to-optics converters.

Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Quantum Physics (quant-ph)

arXiv:2607.29154 [cond-mat.mes-hall]

(or arXiv:2607.29154v1 [cond-mat.mes-hall] for this version)

https://doi.org/10.48550/arXiv.2607.29154 arXiv-issued DOI via DataCite (pending registration)

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Origins of microwave losses in superconducting circuits made with silicon-on-insulator substrates

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