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This research presents a unified inverse-design framework for silicon nanobeam cavities, achieving exceptional cooperativity metrics essential for scalable quantum networks using spin defects like the Al1 center. By optimizing for both symmetric enhancement and asymmetric directional coupling, the study provides a robust design route that maintains high performance even under realistic fabrication constraints.
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Inverse-Designed Nanobeam Cavities for High-Cooperativity Spin-Photon Interfaces in Silicon

arXiv2 min read

arXiv:2609.32205v1 Announce Type: new Abstract: Telecom-band spin defects in silicon offer a compelling platform for integrated quantum networks by combining scalable silicon photonics with spin-based quantum memories and multiqubit registers. The T center and recently demonstrated Al1 center are particularly promising, but their limited coherent zero-phonon emission requires strong cavity enhancement for efficient spin-photon interfaces. Here, we inverse-design silicon nanobeam cavities for both centers using a unified adjoint-optimization framework targeting Purcell enhancement, resonance alignment, and photon extraction. For each emitter, symmetric cavities maximize Purcell enhancement, while asymmetric cavities provide directional coupling to an integrated waveguide. Three-dimensional finite-difference time-domain simulations yield loaded quality factors up to 3.25 x 10^6, Purcell factors up to 1.43 x 10^5, and cooperativities of approximately 280-5000, corresponding to cavity-coupled emission fractions exceeding 99.6%. The asymmetric cavities direct approximately 90% of emitted power into a single on-chip waveguide while maintaining cooperativity above 280. Under nanometer-scale fabrication perturbations, all four designs remain within the high-cooperativity regime, and high cooperativity persists when the cavity quality factor is constrained to a realistic absorption-limited value of 10^5. This unified, fabrication-compatible framework establishes a scalable cavity-design route for silicon telecom spin-photon interfaces and, to our knowledge, the first cavity designs for the Al1 center.

Abstract:Telecom-band spin defects in silicon offer a compelling platform for integrated quantum networks by combining scalable silicon photonics with spin-based quantum memories and multiqubit registers. The T center and recently demonstrated Al1 center are particularly promising, but their limited coherent zero-phonon emission requires strong cavity enhancement for efficient spin-photon interfaces. Here, we inverse-design silicon nanobeam cavities for both centers using a unified adjoint-optimization framework targeting Purcell enhancement, resonance alignment, and photon extraction. For each emitter, symmetric cavities maximize Purcell enhancement, while asymmetric cavities provide directional coupling to an integrated waveguide. Three-dimensional finite-difference time-domain simulations yield loaded quality factors up to 3.25 x 10^6, Purcell factors up to 1.43 x 10^5, and cooperativities of approximately 280-5000, corresponding to cavity-coupled emission fractions exceeding 99.6%. The asymmetric cavities direct approximately 90% of emitted power into a single on-chip waveguide while maintaining cooperativity above 280. Under nanometer-scale fabrication perturbations, all four designs remain within the high-cooperativity regime, and high cooperativity persists when the cavity quality factor is constrained to a realistic absorption-limited value of 10^5. This unified, fabrication-compatible framework establishes a scalable cavity-design route for silicon telecom spin-photon interfaces and, to our knowledge, the first cavity designs for the Al1 center.

arXiv:2609.32205 [quant-ph]

(or arXiv:2609.32205v1 [quant-ph] for this version)

https://doi.org/10.48550/arXiv.2609.32205 Focus to learn more arXiv-issued DOI via DataCite (pending registration)

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Full text under the publisher's open licence · 288 words

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