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Researchers at Univ. Grenoble Alpes and partners have demonstrated high interface transparency (0.88) in a germanium-based quantum device, confirming efficient electron transfer via Andreev reflection between a semiconductor and superconductor. This result validates Ge/SiGe heterostructures as a robust platform for hybrid quantum systems, offering gate-tunable superconducting gaps essential for scalable qubit architectures.

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Interface transparency of 0.88 measured in germanium quantum device

Quantum ZeitgeistSeptember 3, 20266 min read

Researchers measured interface transparency of 0.88 in a novel germanium-based device, demonstrating enhanced conductance via Andreev reflection.

Researchers at Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, and LETI have measured an interface transparency of 0.88 in a germanium quantum device, reporting a value that suggests remarkably efficient electron transfer between the semiconductor and a nearby aluminum superconductor. The work centers on Ge/SiGe quantum well heterostructures, which utilize a two-dimensional hole gas and are emerging as a promising platform for hybrid superconductor-semiconductor quantum devices. This precise measurement is in excellent agreement with theoretical expectations and reports evidence of a gate-tunable induced superconducting gap. Andreev Reflection Enhances Conductance Quantization to 0.88 A measured interface transparency of 0.88 was reported by researchers at Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, and LETI, in a Ge/SiGe heterostructure, a platform increasingly utilized for building these advanced quantum…

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