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This study identifies specific main-group donor-acceptor pairs in zinc oxide as viable candidates for optically active quantum defects, offering a new pathway to engineer spin qubits within mature semiconductor hosts. By leveraging hybrid DFT to predict electronic structures and optical properties like zero-phonon lines, the research provides concrete targets for creating robust color centers with sub-microsecond radiative lifetimes. These findings advance the materials science foundation required for scalable quantum memory and networking applications in wide-band-gap semiconductors.
First-principles design of main-group dimer defects in ZnO as candidate quantum defects
arXiv:2608.20837v1 Announce Type: cross Abstract: Zinc oxide (ZnO), a wide-band-gap semiconductor with mature growth techniques, is a promising host for optically active quantum spins. Yet, optically active quantum defects in ZnO remain largely unexplored. Here, we identify and characterize a family of double substitutional impurities in ZnO, formed by main-group donor-acceptor (DA) pairs, as candidates for optically active quantum defects. Using hybrid density functional theory (DFT), we systematically investigate double substitutional DA complexes and their defect physics, including electronic structure, thermodynamic stability, and optical properties. The proposed defects exhibit isolated defect states, strong spin localization on the acceptor site, and $C_{3v}$ symmetry. Importantly, the electronic structure of the DA pairs is largely determined by the atomic properties of their constituent atoms. We further examine their optical characteristics, including zero-phonon lines (ZPLs), radiative lifetimes, and nonradiative decay to assess their viability as color centers. Notably, among the dimers, (Si$_{Zn}$-B$_O$)$^+$ and (Ge$_{Zn}$-B$_O$)$^+$ exhibit visible optical transitions with sub-microsecond radiative lifetimes and robust charge states against optical ionization, while (Si$_{Zn}$-C$_O$)$^{2+}$ shows the smallest Huang-Rhys factor, approximately 5.6. Our results propose a new family of main-group donor-acceptor defects in ZnO as promising candidates for optically active spin defects.
Abstract:Zinc oxide (ZnO), a wide-band-gap semiconductor with mature growth techniques, is a promising host for optically active quantum spins. Yet, optically active quantum defects in ZnO remain largely unexplored. Here, we identify and characterize a family of double substitutional impurities in ZnO, formed by main-group donor-acceptor (DA) pairs, as candidates for optically active quantum defects. Using hybrid density functional theory (DFT), we systematically investigate double substitutional DA complexes and their defect physics, including electronic structure, thermodynamic stability, and optical properties. The proposed defects exhibit isolated defect states, strong spin localization on the acceptor site, and $C_{3v}$ symmetry. Importantly, the electronic structure of the DA pairs is largely determined by the atomic properties of their constituent atoms. We further examine their optical characteristics, including zero-phonon lines (ZPLs), radiative lifetimes, and nonradiative decay to assess their viability as color centers. Notably, among the dimers, (Si$_{Zn}$-B$_O$)$^+$ and (Ge$_{Zn}$-B$_O$)$^+$ exhibit visible optical transitions with sub-microsecond radiative lifetimes and robust charge states against optical ionization, while (Si$_{Zn}$-C$_O$)$^{2+}$ shows the smallest Huang-Rhys factor, approximately 5.6. Our results propose a new family of main-group donor-acceptor defects in ZnO as promising candidates for optically active spin defects.
Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Quantum Physics (quant-ph)
arXiv:2608.20837 [cond-mat.mtrl-sci]
(or arXiv:2608.20837v1 [cond-mat.mtrl-sci] for this version)
https://doi.org/10.48550/arXiv.2608.20837 Focus to learn more arXiv-issued DOI via DataCite (pending registration)
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