aiqbench analysis
This research proposes a general machine learning framework to accelerate the development of image processing algorithms for semiconductor metrology, specifically addressing feature detection and defect identification in advanced nodes. By leveraging high-speed scanning probe microscopy data, the approach aims to automate parameter extraction and yield optimization amidst increasing stochastic defects in EUV manufacturing. The work directly applies ML techniques to solve critical challenges in chip fabrication control, making it central to the intersection of artificial intelligence and semiconductor technology.
Feature identification for parameter extraction and defect detection using machine learning
arXiv:2610.05812v1 Announce Type: new Abstract: Process control of advanced semiconductor nodes is not only pushing the limits of metrology equipment requirements in terms of resolution and throughput but also in terms of the richness of data to be extracted to enable engineers to finetune the process steps for increased yield. The move towards 3D structures requires extraction of critical dimension parameters from structures which can vary largely from layer to layer. For in-line process control, the necessary automation forces the development of layer and equipment-specific dedicated image processing algorithms. Similarly, with the increase in stochastic defects in the EUV era, detection of defects at the nm scale requires the identification of features captured in low resolution to meet the throughput requirements of HVM fabs, which can again lead to custom algorithm development. With the emergence of ML-based image processing methods, this process of algorithm development for both cases can be accelerated. In this work, we provide the general framework under which the images obtained from high-speed scanning probe microscopy-based systems can be used to train a network for either feature detection for parameter extraction or defect identification.
Abstract:Process control of advanced semiconductor nodes is not only pushing the limits of metrology equipment requirements in terms of resolution and throughput but also in terms of the richness of data to be extracted to enable engineers to finetune the process steps for increased yield. The move towards 3D structures requires extraction of critical dimension parameters from structures which can vary largely from layer to layer. For in-line process control, the necessary automation forces the development of layer and equipment-specific dedicated image processing algorithms. Similarly, with the increase in stochastic defects in the EUV era, detection of defects at the nm scale requires the identification of features captured in low resolution to meet the throughput requirements of HVM fabs, which can again lead to custom algorithm development. With the emergence of ML-based image processing methods, this process of algorithm development for both cases can be accelerated. In this work, we provide the general framework under which the images obtained from high-speed scanning probe microscopy-based systems can be used to train a network for either feature detection for parameter extraction or defect identification.
Machine Learning (cs.LG)
arXiv:2610.05812 [cs.LG]
(or arXiv:2610.05812v1 [cs.LG] for this version)
https://doi.org/10.48550/arXiv.2610.05812 Focus to learn more arXiv-issued DOI via DataCite (pending registration)
https://doi.org/10.1117/12.3011237 Focus to learn more DOI(s) linking to related resources
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