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Everspin's demonstration of CXL-connected MRAM marks a significant architectural shift by enabling memory-semantic access with write speeds up to 100x faster than traditional NAND storage. This advancement directly addresses the memory wall bottleneck in AI training and inference workloads, offering persistent memory that integrates seamlessly into existing high-performance computing stacks without requiring new interconnect protocols.

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Everspin Demonstrates CXL-Connected MRAM at SNIA Developer Conference 2026

HPCwireSeptember 30, 20261 min read

Working platform delivers memory-semantic access with writes up to 100x faster than NAND-based solid-state storage and is ready for customer workload testing CHANDLER, Ariz., Sept. 30, 2026 — Everspin Technologies, Inc., a leading developer and manufacturer of MRAM persistent memory solutions, has announced the successful demonstration of the world’s first Compute Express Link (CXL)-connected MRAM platform […] The post Everspin Demonstrates CXL-Connected MRAM at SNIA Developer Conference 2026 appeared first on HPCwire.

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