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This study demonstrates that composition modulation in SiGe/Ge quantum well heterostructures significantly reduces charge noise and extends the stable gate voltage range for spin qubit devices. By achieving a record-low charge noise amplitude of 0.46 μeV/√Hz, the research addresses a critical bottleneck for building high-performance quantum processors with long coherence times. The findings offer a promising materials engineering pathway to improve the stability of hole gases in silicon-based quantum architectures.
Enhancing charge stability of Ge quantum well heterostructures via SiGe layer composition engineering
arXiv:2609.11214v1 Announce Type: cross Abstract: Composition modulation is a powerful technique for designing materials with tailored properties, fueling the development of advanced semiconductor devices. In this work, we have implemented this technique into Ge quantum well heterostructures, offering a promising avenue to address the critical challenge of charge stability in spin qubit devices. Harnessing the atomic-scale precision of molecular beam epitaxy, we have engineered the band structure of the SiGe top barrier via graded composition modulation, thereby reducing charge accumulation states at the SiGe-dielectric interface and strengthening the effective confinement to the hole gases in the Ge quantum wells. The enhanced charge stability of composition-modulated SiGe/Ge quantum well heterostructures is confirmed in Hall devices, featuring an enlarged stable gate voltage range. We have further fabricated quantum dot devices from the composition-modulated SiGe/Ge quantum well heterostructures and observed remarkably low charge noise with an averaged amplitude of $0.46\,\mathrm{\mu eV}/\mathrm{\sqrt{Hz}}$ at $1\,\mathrm{Hz}$---the lowest reported value for Ge quantum wells grown on silicon. This exceptional charge stability of the quantum dots persists in the few-hole regime, with no observable voltage drift over $\sim$hours. With reduced charge noise and enhanced energy stability, composition-modulated SiGe/Ge heterostructures exhibit significant potential for applications in building high-performance quantum devices, including spin qubits with a long coherence time.
Authors:Ding-Ming Huang, Jun-Hang Liu, Han Gao, Jie-Yin Zhang, Jian-Huan Wang, Fang-Ze Liu, Xin-Yu Zhou, Yi Luo, Bin-Xiao Fu, Xiao-Fei Liu, Ji-Yin Wang, Jian-Jun Zhang, H. Q. Xu
Abstract:Composition modulation is a powerful technique for designing materials with tailored properties, fueling the development of advanced semiconductor devices. In this work, we have implemented this technique into Ge quantum well heterostructures, offering a promising avenue to address the critical challenge of charge stability in spin qubit devices. Harnessing the atomic-scale precision of molecular beam epitaxy, we have engineered the band structure of the SiGe top barrier via graded composition modulation, thereby reducing charge accumulation states at the SiGe-dielectric interface and strengthening the effective confinement to the hole gases in the Ge quantum wells. The enhanced charge stability of composition-modulated SiGe/Ge quantum well heterostructures is confirmed in Hall devices, featuring an enlarged stable gate voltage range. We have further fabricated quantum dot devices from the composition-modulated SiGe/Ge quantum well heterostructures and observed remarkably low charge noise with an averaged amplitude of $0.46\,\mathrm{\mu eV}/\mathrm{\sqrt{Hz}}$ at $1\,\mathrm{Hz}$---the lowest reported value for Ge quantum wells grown on silicon. This exceptional charge stability of the quantum dots persists in the few-hole regime, with no observable voltage drift over $\sim$hours. With reduced charge noise and enhanced energy stability, composition-modulated SiGe/Ge heterostructures exhibit significant potential for applications in building high-performance quantum devices, including spin qubits with a long coherence time.
Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci); Quantum Physics (quant-ph)
arXiv:2609.11214 [cond-mat.mes-hall]
(or arXiv:2609.11214v1 [cond-mat.mes-hall] for this version)
https://doi.org/10.48550/arXiv.2609.11214 arXiv-issued DOI via DataCite (pending registration)
Full text under the publisher's open licence · 257 words
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