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This research addresses a critical engineering hurdle in trapped-ion quantum computing by quantifying how integrated photonic components distort trapping electric fields. The study utilizes FEM simulations to demonstrate that specific design symmetries and transparent conductive oxides can mitigate these distortions, thereby preserving ion stability for high-precision operations like optical clocks.
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Electric Field Distortions in Surface Ion Traps with Integrated Nanophotonics

arXiv1 min read

arXiv:2503.20387v3 Announce Type: replace Abstract: The integration of photonic components into surface ion traps provides a scalable approach for trapped-ion quantum computing, sensing, and metrology, enabling compact systems with enhanced stability and precision. However, the introduction of optical apertures in the trap electrodes can distort the trapping electric field. This can lead to excess micromotion (EMM) and ion displacement which degrade the performance of quantum logic operations and optical clocks. In this work, we systematically investigate the electric field distortion in a surface ion trap with integrated waveguides and grating couplers using Finite Element Method (FEM) simulations. We analyze methods to reduce these distortions by exploiting symmetries and transparent conductive oxide materials.

Abstract:The integration of photonic components into surface ion traps provides a scalable approach for trapped-ion quantum computing, sensing, and metrology, enabling compact systems with enhanced stability and precision. However, the introduction of optical apertures in the trap electrodes can distort the trapping electric field. This can lead to excess micromotion (EMM) and ion displacement which degrade the performance of quantum logic operations and optical clocks. In this work, we systematically investigate the electric field distortion in a surface ion trap with integrated waveguides and grating couplers using Finite Element Method (FEM) simulations. We analyze methods to reduce these distortions by exploiting symmetries and transparent conductive oxide materials.

arXiv:2503.20387 [quant-ph]

(or arXiv:2503.20387v3 [quant-ph] for this version)

https://doi.org/10.1103/l1cn-28kv DOI(s) linking to related resources

Full text under the publisher's open licence · 121 words

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