Skip to content
aiqbench takeQuantum Computing

aiqbench analysis

This research establishes a scalable on-chip platform for phononic information processing by demonstrating strong dissipative coupling between high-overtone acoustic resonators and flexural modes. The system achieves the resolved-sideband regime at room temperature and exhibits tunable Kerr nonlinearity, marking a significant step toward practical quantum phononics at sub-Kelvin temperatures.
Source coveringarXiv
What this isA model's reading of the article and related coverage, written for aiqbench. Not the publisher's words.

Dissipative acousto-mechanical parametric interface between high-overtone acoustics and flexural phonons

arXiv2 min read

arXiv:2605.24581v2 Announce Type: replace Abstract: High-overtone bulk acoustic wave resonators (HBARs) promise advanced phononics, yet achieving nonlinearity remains challenging. We demonstrate a radiation-pressure-type parametric interaction between GHz HBARs and low-frequency flexural modes in a suspended silicon nitride membrane, where mechanical displacement modulates the external dissipation rate to enable dissipative acousto-mechanical coupling. Benefiting from the high quality factor, the system enters the resolved-sideband regime at room temperature, yielding acousto-mechanically induced transparency. We observe tunable Kerr nonlinearity and generate coherent HBAR frequency combs via two-tone driving. Notably, our dissipative coupling strength is 20 times larger than the dispersive coupling, the highest ratio among reported hybrid dissipative-dispersive coupling systems, resulting in the experimental observation of amplification in the reflection spectra under red-sideband driving. The ability to interface dense HBAR modes with a common mechanical resonator provides a scalable on-chip platform for multimode phononic information processing, with quantum phononics potentially achievable at sub-Kelvin temperatures.

Abstract:High-overtone bulk acoustic wave resonators (HBARs) promise advanced phononics, yet achieving nonlinearity remains challenging. We demonstrate a radiation-pressure-type parametric interaction between GHz HBARs and low-frequency flexural modes in a suspended silicon nitride membrane, where mechanical displacement modulates the external dissipation rate to enable dissipative acousto-mechanical coupling. Benefiting from the high quality factor, the system enters the resolved-sideband regime at room temperature, yielding acousto-mechanically induced transparency. We observe tunable Kerr nonlinearity and generate coherent HBAR frequency combs via two-tone driving. Notably, our dissipative coupling strength is 20 times larger than the dispersive coupling, the highest ratio among reported hybrid dissipative-dispersive coupling systems, resulting in the experimental observation of amplification in the reflection spectra under red-sideband driving. The ability to interface dense HBAR modes with a common mechanical resonator provides a scalable on-chip platform for multimode phononic information processing, with quantum phononics potentially achievable at sub-Kelvin temperatures.

Quantum Physics (quant-ph); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Optics (physics.optics)

arXiv:2605.24581 [quant-ph]

(or arXiv:2605.24581v2 [quant-ph] for this version)

https://doi.org/10.48550/arXiv.2605.24581 Focus to learn more arXiv-issued DOI via DataCite

https://doi.org/10.1103/c2yn-qqv9 Focus to learn more DOI(s) linking to related resources

Supplementary_Material.pdf

arXivLabs is a framework that allows collaborators to develop and share new arXiv features directly on our website.

Both individuals and organizations that work with arXivLabs have embraced and accepted our values of openness, community, excellence, and user data privacy. arXiv is committed to these values and only works with partners that adhere to them.

Have an idea for a project that will add value for arXiv's community? Learn more about arXivLabs.

Full text under the publisher's open licence · 255 words

Related coverage