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This study identifies capacitive dielectric loss as the primary bottleneck limiting energy relaxation ($T_1$) in fluxonium qubits, a critical metric for scaling superconducting quantum processors. While a fluorine-based wet treatment offered a marginal improvement in effective quality factor, it failed to resolve the dominant loss mechanisms inherent to the current fabrication processes. The work provides essential diagnostic tools for engineers aiming to extend coherence times and optimize junction deposition techniques.
Characterization and Comparison of Energy Relaxation in Fluxonium Qubits
arXiv:2603.23636v2 Announce Type: replace Abstract: Fluxonium superconducting qubits have demonstrated long coherence times and high single- and two-qubit gate fidelities, making them a favorable building block for superconducting quantum processors. We investigate the dominant limitations to fluxonium qubit energy relaxation time $T_1$ using a set of eight planar, aluminum-on-silicon qubits. We find that a circuit-based model for capacitive dielectric loss best captures the frequency dependence of $T_1$, which we analyze within both a two-level and a six-level energy relaxation model. We convert the measured $T_1$ into an effective capacitive quality factor $Q_\mathrm{C}^{\mathrm{eff}}$ to compare qubits on equal footing, accounting for independently estimated contributions from $1/f$ flux noise and radiative loss to the control and readout circuitry. We apply this methodology to compare qubits from two fabrication processes: a baseline process and one that applies a fluorine-based wet treatment prior to Josephson junction deposition. We resolve a small improvement of (13.8 $\pm$ 8.4$)\%$ in the process mean $Q_\mathrm{C}^{\mathrm{eff}}$, indicating that the fluorine treatment may have reduced loss from the metal-substrate interface, but did not address the primary source of loss in these fluxonium qubits.
Authors:Kate Azar, Lamia Ateshian, Mallika T. Randeria, Renée DePencier Piñero, Jeffrey M. Gertler, Junyoung An, Felipe Contipelli, Leon Ding, Michael Gingras, Kevin Grossklaus, Max Hays, Thomas M. Hazard, Junghyun Kim, Bethany M. Niedzielski, Hannah Stickler, Kunal L. Tiwari, Helin Zhang, Jeffrey A. Grover, Jonilyn L. Yoder, Mollie E. Schwartz, William D. Oliver, Kyle Serniak
Abstract:Fluxonium superconducting qubits have demonstrated long coherence times and high single- and two-qubit gate fidelities, making them a favorable building block for superconducting quantum processors. We investigate the dominant limitations to fluxonium qubit energy relaxation time $T_1$ using a set of eight planar, aluminum-on-silicon qubits. We find that a circuit-based model for capacitive dielectric loss best captures the frequency dependence of $T_1$, which we analyze within both a two-level and a six-level energy relaxation model. We convert the measured $T_1$ into an effective capacitive quality factor $Q_\mathrm{C}^{\mathrm{eff}}$ to compare qubits on equal footing, accounting for independently estimated contributions from $1/f$ flux noise and radiative loss to the control and readout circuitry. We apply this methodology to compare qubits from two fabrication processes: a baseline process and one that applies a fluorine-based wet treatment prior to Josephson junction deposition. We resolve a small improvement of (13.8 $\pm$ 8.4$)\%$ in the process mean $Q_\mathrm{C}^{\mathrm{eff}}$, indicating that the fluorine treatment may have reduced loss from the metal-substrate interface, but did not address the primary source of loss in these fluxonium qubits.
Quantum Physics (quant-ph); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
arXiv:2603.23636 [quant-ph]
(or arXiv:2603.23636v2 [quant-ph] for this version)
Full text under the publisher's open licence · 248 words
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