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This research demonstrates an all-optical magnetometry technique using boron vacancy centers in hexagonal boron nitride that eliminates the need for microwaves by leveraging ground-state level anti-crossing. The method achieves a threefold sensitivity improvement over existing ODMR methods while maintaining a spatial resolution of approximately 1 µm, enabling precise wide-field imaging of near-field DC magnetic fields. This advancement expands the practical utility of van der Waals quantum sensors for robust sensing in extreme environments.
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All-Optical Wide-Field Magnetometry with Van Der Waals Quantum Sensor

arXiv2 min read

arXiv:2606.07899v1 Announce Type: new Abstract: Negatively charged boron vacancy ($V_B^-$) centers in hexagonal boron nitride ($h$-BN) have attracted wide-range interests owing to their van der Waals lattice and their potentials for $in$-$situ$ quantum sensing. Here we propose and experimentally demonstrate an all-optical strategy for wide-field magnetometry based on $V_B^-$ centers. This strategy exploits the magnetically sensitive ground-state level anti-crossing (GSLAC) of $V_B^-$ centers, which induces a strong electron spin transition between $m_S = 0$ and $m_S = -1$ states, enabling microwave-free magnetic field measurement. By monitoring the shift of GSLAC feature, the external magnetic field can be precisely determined. Using this technique, we demonstrate all-optical wide-field imaging of near-field DC magnetic field distribution from current-carrying circuits over an area of around 42 $\times$ 21 $\mu$m$^2$. An estimated photon shot-noise-limited sensitivity of 67.1 $\mu$T/$\sqrt{\text{Hz}}$ is achieved for a single pixel, which is an approximately threefold improvement over the ODMR method, along with a spatial resolution of about 1 $\mu$m per pixel. Our approach expands the applicability of $V_B^-$ centers in quantum sensing, paving the way for robust and convenient magnetometry under extreme conditions.

Abstract:Negatively charged boron vacancy ($V_B^-$) centers in hexagonal boron nitride ($h$-BN) have attracted wide-range interests owing to their van der Waals lattice and their potentials for $in$-$situ$ quantum sensing. Here we propose and experimentally demonstrate an all-optical strategy for wide-field magnetometry based on $V_B^-$ centers. This strategy exploits the magnetically sensitive ground-state level anti-crossing (GSLAC) of $V_B^-$ centers, which induces a strong electron spin transition between $m_S = 0$ and $m_S = -1$ states, enabling microwave-free magnetic field measurement. By monitoring the shift of GSLAC feature, the external magnetic field can be precisely determined. Using this technique, we demonstrate all-optical wide-field imaging of near-field DC magnetic field distribution from current-carrying circuits over an area of around 42 $\times$ 21 $\mu$m$^2$. An estimated photon shot-noise-limited sensitivity of 67.1 $\mu$T/$\sqrt{\text{Hz}}$ is achieved for a single pixel, which is an approximately threefold improvement over the ODMR method, along with a spatial resolution of about 1 $\mu$m per pixel. Our approach expands the applicability of $V_B^-$ centers in quantum sensing, paving the way for robust and convenient magnetometry under extreme conditions.

arXiv:2606.07899 [quant-ph]

(or arXiv:2606.07899v1 [quant-ph] for this version)

https://doi.org/10.48550/arXiv.2606.07899 Focus to learn more arXiv-issued DOI via DataCite (pending registration)

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Full text under the publisher's open licence · 268 words

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