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This study addresses a critical bottleneck in quantum information processing by using additive solid immersion lenses to overcome diamond-air refractive index mismatches, thereby significantly enhancing photon extraction efficiency from nitrogen-vacancy centers. The research demonstrates that scalable pulsed laser deposition can reduce the necessary saturation intensity for these qubits by 33%, directly improving readout performance for practical quantum applications.
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Additive solid immersion lenses for enhanced collection efficiency of shallow NV centers by pulsed laser deposition and structurization of high-k amorphous oxides

arXiv2 min read

arXiv:2610.01183v1 Announce Type: cross Abstract: The negatively charged nitrogen-vacancy ($\mathrm{NV}^-$) defect in diamond can be used for quantum information processing via the readout of the radiative decay of the excited state into the ground state. The large refractive index mismatch of diamond and air causes low photon extraction efficiency due to total internal reflection losses. Here, we investigate the photon extraction numerically and report additive solid immersion lenses (SILs) consisting of the high-k dielectric yttria-stabilized-zirconia (YSZ) for surface modification and enhanced light extraction of shallow implanted nitrogen-vacancy centers. We demonstrate an average increase of 63% in saturation intensity using a scalable bottum up room temperature pulsed laser deposition and photolithography structurization process. The average necessary laser intensity for saturation is reduced by 33% by the SILs.

Abstract:The negatively charged nitrogen-vacancy ($\mathrm{NV}^-$) defect in diamond can be used for quantum information processing via the readout of the radiative decay of the excited state into the ground state. The large refractive index mismatch of diamond and air causes low photon extraction efficiency due to total internal reflection losses. Here, we investigate the photon extraction numerically and report additive solid immersion lenses (SILs) consisting of the high-k dielectric yttria-stabilized-zirconia (YSZ) for surface modification and enhanced light extraction of shallow implanted nitrogen-vacancy centers. We demonstrate an average increase of 63% in saturation intensity using a scalable bottum up room temperature pulsed laser deposition and photolithography structurization process. The average necessary laser intensity for saturation is reduced by 33% by the SILs.

Materials Science (cond-mat.mtrl-sci); Optics (physics.optics); Quantum Physics (quant-ph)

arXiv:2610.01183 [cond-mat.mtrl-sci]

(or arXiv:2610.01183v1 [cond-mat.mtrl-sci] for this version)

https://doi.org/10.48550/arXiv.2610.01183 Focus to learn more arXiv-issued DOI via DataCite (pending registration)

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Full text under the publisher's open licence · 220 words

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