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This research identifies two-level tunneling states in native oxides as a fundamental limit to phonon lifetimes in quartz microresonators, challenging the assumption that lower temperatures alone suffice to reduce decoherence. By quantifying how these intrinsic defects dominate dissipation even in advanced fabrication regimes, the study provides a critical roadmap for engineering strain-node modes or surface treatments to extend quantum coherence times.
Tunneling states limit quantum lifetimes in microresonators

Phonon lifetimes in advanced microresonators are increasingly restricted by disorder, specifically two-level tunneling states hosted in native oxides.
Researchers have developed a quantum master equation to calculate phonon decoherence caused by two-level tunneling states in quartz microresonators. The work addresses a surprising limitation; even as fabrication techniques improve and resonators achieve the quantum ground state, phonon lifetimes are restricted by these tunneling states found in native oxides or damaged surface layers. This suggests a previously underestimated source of decoherence, as mechanical losses decrease and TLS emerge as the dominant mechanism. The team finds that phonon coherence time is maximized at low temperatures despite increased mechanical dissipation, and phonon-TLS coupling can be reduced for modes with strain nodes at surfaces. These TLSs, inherent to amorphous materials, introduce a dissipation mechanism that unexpectedly intensifies at lower temperatures, a phenomenon observed in silicon, lithium niobate, quartz, and other crystalline media. The research detailed in a paper published on September 22, 2026, focuses on understanding and quantifying this decoherence source as fabrication techniques improve and push the boundaries of quantum coherence. Prior to this work, a quantitative description of the interplay between phonon modes and large ensembles of TLSs remained elusive, hindering progress in optimizing these…
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