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This research investigates spectral stability in hexagonal boron nitride (hBN) quantum emitters, specifically addressing how local electrostatic fluctuations cause frequency drift independent of temperature. By modeling these defects as donor-acceptor pairs, the study identifies distinct recombination pathways that respond differently to charge noise, offering a roadmap for building robust spin-photon interfaces. The findings are critical for advancing solid-state quantum networks where environmental isolation is insufficient to prevent spectral diffusion.
Temperature has less impact on this hBN qubit’s stability

Hexagonal boron nitride defect centers show promise as quantum emitters, but spectral instability is a challenge, prompting research into how a resonator can stabilize qubit frequencies.
Mechanically isolated quantum emitters in hexagonal boron nitride maintain narrow optical linewidths even at room temperature, a characteristic that sets them apart from other solid-state candidates for coherent optical control. Researchers are now focusing on addressing persistent spectral instabilities that hinder their potential; these emitters frequently exhibit fluctuations and intermittency on timescales ranging from nanoseconds to seconds. The work demonstrates detailed examination of a bright, single hBN emitter within a donor-acceptor pair framework to understand its spectral stability, a step toward realizing robust spin-photon interfaces. High-resolution spectroscopy revealed two zero-phonon lines originating from a single hexagonal boron nitride (hBN) emitter, demonstrating distinct spectral diffusion dynamics…
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