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This study identifies a specific atomic defect structure within zinc oxide semiconductor that functions as a high-performance spin qubit, addressing critical needs for scalable solid-state quantum computing and communications. The material's compatibility with existing fabrication techniques suggests this discovery could facilitate the transition from theoretical models to integrated quantum devices operating at room temperature. By combining bright visible-light emission with long coherence times, ZnO defects offer a promising alternative to current diamond-based platforms like nitrogen-vacancy centers.
SKKU-led Team Identifies ‘Zinc Oxide Spin Qubit’ — A Semiconductor-Based Quantum Technology

Insider Brief PRESS RELEASE — A research team led by SKKU Professor Hosung Seo of the Department of Quantum Information Engineering and the SKKU Advanced Institute of Nanotechnology, working with the University of Wisconsin–Madison and the University of Washington, has identified—for the first time—an atomic defect structure in the zinc oxide (ZnO) semiconductor with outstanding […]
Researchers from Sungkyunkwan University, the University of Wisconsin–Madison, and the University of Washington identified a molybdenum–oxygen-vacancy defect in zinc oxide that theoretical simulations indicate could serve as a high-performance spin qubit for quantum computing, communications, and sensing. The proposed defect combines bright visible-light emission, a low Huang-Rhys factor, and an estimated spin coherence time of about 4 milliseconds, properties that support efficient quantum…
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