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This research introduces TDSE-Z, a computational framework that resolves long-standing simulation errors in semiconductor heterostructures by accurately modeling electrons with spatially varying effective mass. By achieving sub-percent accuracy against WKB theory, the tool significantly advances the design of next-generation attosecond optoelectronics and quantum devices.
Researchers Simulate Quantum Behaviour with New Framework

Computed tunnel splittings now align with Wentzel, Kramers, Brillouin theory to within sub-percent accuracy when simulating a GaAs/Al0. 3Ga0. 7As double quantum well system.
A tunnel splitting calculation matching Wentzel, Kramers, Brillouin (WKB) theory to within a sub-percent level has been achieved using a new computational framework called TDSE-Z. Accurately modelling electron behaviour at material interfaces, particularly in systems with spatially varying effective mass like semiconductor heterostructures, previously posed a key challenge for existing software. Zakaria Dahbi and Amelle Zaïr of King’s College London have unveiled…
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