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This research details the development of a spin transistor using chromium sulfide bromide (CrSBr), an antiferromagnetic semiconductor capable of gate-tunable magnetoresistance for non-volatile computing. By integrating logic and memory functions through layer-dependent space charge mechanisms, this architecture offers a potential pathway to overcome current limitations in data processing efficiency and energy consumption. The findings represent a significant advancement in spin-based electronics that could reshape future hardware architectures beyond standard CMOS scaling limits.