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This research introduces Broadband Cryogenic Transient Dielectric Spectroscopy (BCTDS) as a novel method to characterize Two-Level System (TLS) defects, which are primary sources of decoherence in superconducting quantum circuits. By enabling broadband probing at cryogenic temperatures, the technique offers new insights into defect distributions and correlation functions that were previously inaccessible with limited-frequency circuit-QED probes. The study demonstrates how these dynamics can be modeled using a driven tunneling framework to better understand material limitations for scalable quantum hardware.
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Probing the Dynamics of Two-Level System Defect Ensembles via Broadband Cryogenic Transient Dielectric Spectroscopy

arXiv3 min de cititArticolul și perspectiva sunt în engleză.

arXiv:2505.18263v5 Announce Type: replace Abstract: Two-level system (TLS) defects in dielectrics are a major source of decoherence in superconducting circuits, yet their microscopic origin and distribution remain poorly understood. Existing circuit-QED probes access limited frequency ranges and mode volumes, restricting studies of isolated materials and interfaces. Here, we present Broadband Cryogenic Transient Dielectric Spectroscopy (BCTDS), a technique for probing TLS-hosting materials over a broad frequency range at cryogenic temperatures. Under strong finite-duration microwave excitation, the transient homodyne I-Q response exhibits coherent phase dynamics after the drive is turned off. Fourier analysis of the transient phase reveals characteristic V-shaped structures that move between cooldowns, consistent with thermocycling-induced changes in the local TLS defect environment that shift defect resonance frequencies. The transient response of BCTDS further enables estimation of susceptibility and two-time correlation functions of the TLS defect ensemble. The observed phase dynamics are qualitatively captured by a driven standard tunneling model containing only a few representative TLS defects. Despite its simplicity relative to the full experimental ensemble, the model reproduces the essential Floquet-dressed dynamics during the drive and generates post-pulse V-shaped structures and interference fringes consistent with the experimental data. The observed BCTDS response may reflect a crossover from localized TLS defect dynamics to a delocalized regime under strong driving, before being quenched into a transient regime that reflects the TLS defect resonance frequencies. Overall, BCTDS represents a potentially useful broadband, time-resolved wafer-level approach for probing TLS defects relevant to quantum technologies.

Abstract:Two-level system (TLS) defects in dielectrics are a major source of decoherence in superconducting circuits, yet their microscopic origin and distribution remain poorly understood. Existing circuit-QED probes access limited frequency ranges and mode volumes, restricting studies of isolated materials and interfaces. Here, we present Broadband Cryogenic Transient Dielectric Spectroscopy (BCTDS), a technique for probing TLS-hosting materials over a broad frequency range at cryogenic temperatures. Under strong finite-duration microwave excitation, the transient homodyne I-Q response exhibits coherent phase dynamics after the drive is turned off. Fourier analysis of the transient phase reveals characteristic V-shaped structures that move between cooldowns, consistent with thermocycling-induced changes in the local TLS defect environment that shift defect resonance frequencies. The transient response of BCTDS further enables estimation of susceptibility and two-time correlation functions of the TLS defect ensemble. The observed phase dynamics are qualitatively captured by a driven standard tunneling model containing only a few representative TLS defects. Despite its simplicity relative to the full experimental ensemble, the model reproduces the essential Floquet-dressed dynamics during the drive and generates post-pulse V-shaped structures and interference fringes consistent with the experimental data. The observed BCTDS response may reflect a crossover from localized TLS defect dynamics to a delocalized regime under strong driving, before being quenched into a transient regime that reflects the TLS defect resonance frequencies. Overall, BCTDS represents a potentially useful broadband, time-resolved wafer-level approach for probing TLS defects relevant to quantum technologies.

Quantum Physics (quant-ph); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci); Instrumentation and Detectors (physics.ins-det)

arXiv:2505.18263 [quant-ph]

(or arXiv:2505.18263v5 [quant-ph] for this version)

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