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This study presents a novel "modulated wiggle well" heterostructure design for silicon quantum wells that deterministically enhances valley splitting while suppressing disorder-induced variability. By applying systematic variational optimization within realistic technological constraints, the research achieves wide electrical tunability of qubit properties, directly addressing key challenges regarding fidelity and scalability in Si-based quantum processors.
Optimization of Si/SiGe Heterostructures for Large and Robust Valley Splitting in Silicon Qubits
arXiv:2512.18064v2 Announce Type: replace-cross Abstract: Small and device-dependent valley splittings remain a key challenge for electron spin qubits in silicon (Si), directly limiting qubit fidelity, device uniformity, and the scalability of Si-based quantum processors. In silicon-germanium (SiGe) heterostructures, this problem can be addressed through engineering of the epitaxial layer stack. Several heuristic strategies have been proposed to enhance the energy gap between the two nearly degenerate valley states in strained Si/SiGe quantum wells (QWs), e.g., sharp Si/SiGe interfaces, Ge spikes, or oscillating Ge concentrations within the QW. Here, we develop a systematic variational optimization approach to compute optimal Ge concentration profiles that enhance selected properties of the intervalley coupling matrix element. Our free-shape optimization framework is augmented by realistic technological constraints to ensure feasibility of the resulting epitaxial profiles and is based on an effective-mass envelope-function theory accounting for strain and compositional alloy disorder. Previously proposed heterostructure designs are recovered as special cases of the constrained optimization problem. Our main result is a novel heterostructure design, which we refer to as the "modulated wiggle well", providing both a large deterministic enhancement of the valley splitting and a strong suppression of disorder-induced variability. In addition, this design enables wide electrical tunability of the valley splitting - from approximately $200\,\mu \text{eV}$ to above $1\,\text{meV}$ - offering new opportunities for engineering robust and switchable silicon qubits.
Abstract:Small and device-dependent valley splittings remain a key challenge for electron spin qubits in silicon (Si), directly limiting qubit fidelity, device uniformity, and the scalability of Si-based quantum processors. In silicon-germanium (SiGe) heterostructures, this problem can be addressed through engineering of the epitaxial layer stack. Several heuristic strategies have been proposed to enhance the energy gap between the two nearly degenerate valley states in strained Si/SiGe quantum wells (QWs), e.g., sharp Si/SiGe interfaces, Ge spikes, or oscillating Ge concentrations within the QW. Here, we develop a systematic variational optimization approach to compute optimal Ge concentration profiles that enhance selected properties of the intervalley coupling matrix element. Our free-shape optimization framework is augmented by realistic technological constraints to ensure feasibility of the resulting epitaxial profiles and is based on an effective-mass envelope-function theory accounting for strain and compositional alloy disorder. Previously proposed heterostructure designs are recovered as special cases of the constrained optimization problem. Our main result is a novel heterostructure design, which we refer to as the "modulated wiggle well", providing both a large deterministic enhancement of the valley splitting and a strong suppression of disorder-induced variability. In addition, this design enables wide electrical tunability of the valley splitting - from approximately $200\,\mu \text{eV}$ to above $1\,\text{meV}$ - offering new opportunities for engineering robust and switchable silicon qubits.
Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Optimization and Control (math.OC); Applied Physics (physics.app-ph); Quantum Physics (quant-ph)
arXiv:2512.18064 [cond-mat.mes-hall]
(or arXiv:2512.18064v2 [cond-mat.mes-hall] for this version)
https://doi.org/10.48550/arXiv.2512.18064 Focus to learn more arXiv-issued DOI via DataCite
https://doi.org/10.1103/pd5d-sddp Focus to learn more DOI(s) linking to related resources
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