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This study investigates non-radiative energy transfer between boron vacancies in hexagonal boron nitride and adjacent 2D materials, addressing a key mechanism affecting the performance of atomic-scale quantum sensors. The findings demonstrate that FRET rates become negligible for hBN layers thicker than 3 nm, offering critical design parameters for integrating these defects into van der Waals heterostructures without signal quenching. Additionally, the work provides an experimentally extracted intrinsic radiative decay rate for $V_B^-$ defects, advancing the fundamental understanding required to optimize solid-state quantum sensing platforms.
Non-radiative energy transfer between boron vacancies in hexagonal boron nitride and other 2D materials
arXiv:2512.03970v2 Announce Type: replace-cross Abstract: Boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional quantum sensors capable of operating at atomic-scale proximity. However, the mechanisms responsible for photoluminescence quenching in thin hBN sensing layers when placed in contact with absorptive materials remain largely unexplored. In this Letter, we investigate non-radiative F\"orster resonance energy transfer (FRET) between $V_B^-$ centers and either monolayer graphene or 2D semiconductors. Strikingly, we find that the FRET rate is negligible for hBN sensing layers thicker than 3 nm, highlighting the potential of $V_B^-$ centers for integration into ultra-thin quantum sensors within van der Waals heterostructures. Furthermore, we experimentally extract the intrinsic radiative decay rate of $V_B^-$ defects.
Authors:Jules Fraunié, Mikhail M. Glazov, Sébastien Roux, Abraao Cefas Torres-Dias, Cora Crunteanu-Stanescu, Tom Fournier, Maryam S. Dehaghani, Tristan Clua-Provost, Delphine Lagarde, Laurent Lombez, Xavier Marie, Benjamin Lassagne, Thomas Poirier, James H. Edgar, Vincent Jacques, Cedric Robert
Abstract:Boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional quantum sensors capable of operating at atomic-scale proximity. However, the mechanisms responsible for photoluminescence quenching in thin hBN sensing layers when placed in contact with absorptive materials remain largely unexplored. In this Letter, we investigate non-radiative Förster resonance energy transfer (FRET) between $V_B^-$ centers and either monolayer graphene or 2D semiconductors. Strikingly, we find that the FRET rate is negligible for hBN sensing layers thicker than 3 nm, highlighting the potential of $V_B^-$ centers for integration into ultra-thin quantum sensors within van der Waals heterostructures. Furthermore, we experimentally extract the intrinsic radiative decay rate of $V_B^-$ defects.
Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Quantum Physics (quant-ph)
arXiv:2512.03970 [cond-mat.mtrl-sci]
(or arXiv:2512.03970v2 [cond-mat.mtrl-sci] for this version)
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