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This breakthrough utilizes an integrated microwave plasma chemical vapor deposition (MPCVD) workflow to fabricate 2D arrays of diamond qubits with precise control over their position and orientation. By combining selective etching with nitridation, the new buried-growth process improves mask durability while enabling a continuous growth sequence essential for scalable quantum device manufacturing.
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New buried-growth process enables 2D arrays of position- and orientation-controlled diamond qubits
Phys.org1 min de cititArticolul și perspectiva sunt în engleză.

Researchers at Kanazawa University, in collaboration with Diamond and Carbon Applications (Germany), have developed a buried-growth process for nitrogen–vacancy (NV) centers in diamond using microwave plasma chemical vapor deposition (MPCVD). By employing nitrogen-radical selective etching, which simultaneously enhances metal-mask durability through nitridation, the team enabled a continuous etching–growth sequence within a single MPCVD process.
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