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Researchers at Ulm University have developed a method to electrically detect nitrogen-vacancy (NV) centers just 10 nanometers beneath a diamond surface using an implantation and overgrowth technique. This approach suppresses background noise typically found in shallow defects, offering a more efficient alternative to fluorescence methods for quantum sensing applications. The breakthrough facilitates the creation of chip-integrated spin registers essential for advancing solid-state quantum computing architectures.
How Ulm University Detects NV Center Spin via Photocurrent
Researchers at Ulm University demonstrated photoelectrical readout of the electronic spin of nitrogen-vacancy (NV) centers in diamond, implanted at 10 nm depth.
Researchers at Ulm University have achieved photoelectrical readout of the spin state of nitrogen-vacancy (NV) centers implanted just 10 nanometers beneath the surface of diamond, a surprising feat given the challenges of detecting such shallowly positioned defects. The team successfully demonstrated coherent control of these NV centers even after diamond overgrowth, establishing a robust method for spin state detection. This photoelectrical readout offers an advantage over conventional fluorescence techniques due to a higher charge carrier rate, potentially accelerating progress in quantum sensing…
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