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The paper shows that electron-beam irradiation can place hBN B-center single-photon emitters with a 40 nm positional standard deviation, and that beam-emitter interaction volume is the main limit. Sub-10 nm accuracy is a stated goal, not a demonstrated result. For quantum hardware readers, this is incremental fabrication work on solid-state photon sources, relevant to scalable photonic quantum devices.
Deterministic positioning accuracy of B centers in hBN by electron irradiation
arXiv:2610.16468v1 Announce Type: cross Abstract: Hexagonal boron nitride (hBN) is a promising material platform for quantum technologies, enabling both the realization of nanophotonic devices and the hosting of point defects that act as high-quality single-photon emitters (SPEs). Among these defects, B centers, which reproducibly emit at 436 nm, can be generated individually at predefined positions using electron beam irradiation, a crucial capability for top-down quantum photonics. Yet, the spatial accuracy of emitter creation strongly conditions the potential applications. Here, we generate arrays of individual B centers in a scanning electron microscope (SEM) with in-situ cathodoluminescence (CL) monitoring. We characterize the sources of random deviations from the target positions to identify the limitations to their deterministic positioning. In particular, we measure the distance between the electron beam and the emitter at the moment the emitter is created based on CL mapping. This approach provides a direct estimation of the spatial extent of the beam-emitter interaction. We find this contribution to be the main constraint to the emitter fabrication accuracy, yielding a standard deviation of 27 nm. Additional contributions, primarily from the finite density of UV-emitting carbon dimer precursors, increase the overall positional standard deviation to 40 nm. Our results highlight the possible improvements to the B center creation technique to reach sub-10 nm accuracy.
Abstract:Hexagonal boron nitride (hBN) is a promising material platform for quantum technologies, enabling both the realization of nanophotonic devices and the hosting of point defects that act as high-quality single-photon emitters (SPEs). Among these defects, B centers, which reproducibly emit at 436 nm, can be generated individually at predefined positions using electron beam irradiation, a crucial capability for top-down quantum photonics. Yet, the spatial accuracy of emitter creation strongly conditions the potential applications. Here, we generate arrays of individual B centers in a scanning electron microscope (SEM) with in-situ cathodoluminescence (CL) monitoring. We characterize the sources of random deviations from the target positions to identify the limitations to their deterministic positioning. In particular, we measure the distance between the electron beam and the emitter at the moment the emitter is created based on CL mapping. This approach provides a direct estimation of the spatial extent of the beam-emitter interaction. We find this contribution to be the main constraint to the emitter fabrication accuracy, yielding a standard deviation of 27 nm. Additional contributions, primarily from the finite density of UV-emitting carbon dimer precursors, increase the overall positional standard deviation to 40 nm. Our results highlight the possible improvements to the B center creation technique to reach sub-10 nm accuracy.
Other Condensed Matter (cond-mat.other); Quantum Physics (quant-ph)
arXiv:2610.16468 [cond-mat.other]
(or arXiv:2610.16468v1 [cond-mat.other] for this version)
https://doi.org/10.48550/arXiv.2610.16468 Focus to learn more arXiv-issued DOI via DataCite (pending registration)
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