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This research applies deep convolutional neural networks and genetic algorithms to solve the complex inverse design problem of Doherty power amplifier combiners, achieving high efficiency in GaN HEMT prototypes. By integrating pixelated layout representations with dual-state impedance synthesis, the study demonstrates a tangible convergence of AI methods with advanced hardware architecture for RF systems. This work represents a significant step toward automating the optimization of radio frequency components where traditional analytical design is insufficient.
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Deep Learning-Driven Inverse Design of Doherty Power Amplifiers Using Pixelated Combiners and Dual-State Impedance Synthesis

arXiv2 min de cititArticolul și perspectiva sunt în engleză.

arXiv:2606.18395v2 Announce Type: replace-cross Abstract: The output combiner of a Doherty power amplifier (PA) integrates load modulation, impedance matching, and phase compensation within a single network, making its design and synthesis highly challenging. In this paper, we propose a three-port Doherty combiner design methodology that combines deep convolutional neural networks (CNNs), pixelated layout representations, and genetic algorithms (GA) with dual-state impedance synthesis to address both peak and back-off power conditions. As a proof of concept, two GaN HEMT Doherty PA prototypes incorporating three-port pixelated combiners are designed and fabricated. Both prototypes achieve a measured saturated output power exceeding 44.2 dBm with peak drain efficiency above 71.2% within 2.6-2.8 GHz. Furthermore, a drain efficiency as high as 64% is measured at the 6-dB back-off level. After applying digital predistortion, each prototype achieves an adjacent channel leakage ratio (ACLR) better than -51.3 dBc.

Abstract:The output combiner of a Doherty power amplifier (PA) integrates load modulation, impedance matching, and phase compensation within a single network, making its design and synthesis highly challenging. In this paper, we propose a three-port Doherty combiner design methodology that combines deep convolutional neural networks (CNNs), pixelated layout representations, and genetic algorithms (GA) with dual-state impedance synthesis to address both peak and back-off power conditions. As a proof of concept, two GaN HEMT Doherty PA prototypes incorporating three-port pixelated combiners are designed and fabricated. Both prototypes achieve a measured saturated output power exceeding 44.2 dBm with peak drain efficiency above 71.2% within 2.6-2.8 GHz. Furthermore, a drain efficiency as high as 64% is measured at the 6-dB back-off level. After applying digital predistortion, each prototype achieves an adjacent channel leakage ratio (ACLR) better than -51.3 dBc.

Signal Processing (eess.SP); Artificial Intelligence (cs.AI); Hardware Architecture (cs.AR); Systems and Control (eess.SY)

arXiv:2606.18395 [eess.SP]

(or arXiv:2606.18395v2 [eess.SP] for this version)

https://doi.org/10.48550/arXiv.2606.18395 Focus to learn more arXiv-issued DOI via DataCite

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