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This research demonstrates a significant breakthrough in reducing the power consumption of low-noise amplifiers used for qubit readout, achieving over 80% fidelity with one-tenth the previous energy requirement. By optimizing indium content in HEMT devices and benchmarking performance within actual quantum systems rather than in isolation, the study paves the way for more energy-efficient and scalable quantum processors.
Chalmersnext Labs Maps LNA Power Use Against Qubit Fidelity
Greater than 80% qubit readout fidelity is now achievable using only approximately SI{0. 3}{mW} of power, an order of magnitude less than previously required. Conventional benchmarks fail to identify that optimal low-noise amplification isn’t simply linked to lowest noise or highest gain, but depends on indium content within the HEMT device itself.
A fidelity exceeding eighty per cent across multiple devices was achieved using only approximately SI{0.3}{mW} of power, previously typical operating levels required roughly ten times more. An indium content of sixty per cent within high-electron-mobility transistors provides peak performance for assigning qubits correctly, despite similar noise temperatures to seventy per cent counterparts measured by standard methods. A new method evaluates amplifiers key for reading information from qubits, directly assessing how well these devices perform within…
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