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Argonne National Laboratory has identified atomic-scale disorder in silicon quantum wells as the primary driver of variability in valley splitting for spin qubits. By transforming this previously unexplained phenomenon into a specific materials engineering challenge, researchers have provided clear pathways to improve electron stability and reduce error rates in scalable quantum processors. This breakthrough leverages established semiconductor manufacturing techniques while pinpointing fundamental limits that must be overcome through precise material control.
Argonne Lab maps atomic flaws that cause silicon qubit errors

Argonne Lab mapped atomic disorder in quantum well layers, revealing a key source of variability in valley splitting—a factor impacting fidelity of silicon spin qubits.
Argonne National Laboratory researchers have mapped atomic-level flaws that directly impact the performance of silicon spin qubits, a promising platform for scalable quantum computing. The team used the Chicago Quantum Computing Testbed, the first full-stack, solid-state…
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