AlGaAs nanowires as a universal platform for GaAs, InGaAs, and InAs quantum dots

Abstract:Optical quantum dots (QDs) are central to photonic quantum technologies, with fabrication approaches tailored to different spectral ranges. A key challenge, however, is the realization of a unified platform$\unicode{x2014}$a single growth method combined with a host material offering a designable architecture$\unicode{x2014}$enabling wavelength tunability across the full emission range and co-integration of multiple quantum dots. Here, we introduce AlGaAs nanowires as a universal host for GaAs, InGaAs, and InAs QDs. Building on our previous demonstration of high-quality GaAs QDs, we realize InGaAs QDs with tunable emission by varying the growth duration from 2 to 5 s, achieving emission at 780 and 920 nm. We further showcase the platform's versatility for multi-quantum-dot devices by co-integrating two InGaAs QDs, as well as GaAs and InGaAs QDs within a single nanowire. Finally, we initiate a first step toward pure InAs QDs by growing a pristine InAs segment on AlGaAs nanowires, demonstrating material compatibility.

Optics (physics.optics); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Quantum Physics (quant-ph)

arXiv:2608.24495 [physics.optics]

(or arXiv:2608.24495v1 [physics.optics] for this version)

https://doi.org/10.48550/arXiv.2608.24495 Focus to learn more arXiv-issued DOI via DataCite (pending registration)

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