Agentic TCAD Calibration Workflow for Oxide Semiconductor Transistors

arXiv:2609.12184v1 Announce Type: cross Abstract: Experimental TCAD calibration is essential for predictive technology modeling of emerging oxide semiconductor transistors. However, it remains time-consuming and expert dependent because of model ambiguity. Multiple physical models and parameter sets can reproduce the same measured transfer characteristics, while local fitting alone cannot uniquely identify the underlying device physics. We present the first demonstration of an agentic TCAD calibration workflow for a fabricated bottom-gate In--W--O (BG-IWO) transistor. Starting from the measured transfer curve and device information, the workflow uses measurement--TCAD residuals and local sensitivity tests to select bounded parameter corrections or evaluate additional physical models, and accept only updates that improve device metrics. The LLM agent orchestrates the workflow, while Sentaurus governs the device physics. For the 2\%-W reference device, five agent-suggested updates yield a fixed calibrated model, reducing the multi-metric device objective $J$ by 14.3$\times$. Maximum $V_{\mathrm{th}}$/$I_{\mathrm{on}}$ errors are 36.1~mV/0.022 decade for varying-drain-bias tests and 46.2~mV/0.062 decade for varying-channel-length tests, demonstrating model transferability across bias and geometry rather than a local parameter fit. W-composition tests provide process-sensitive insight. This agentic workflow provides a faster route to model development for emerging device technologies.

Abstract:Experimental TCAD calibration is essential for predictive technology modeling of emerging oxide semiconductor transistors. However, it remains time-consuming and expert dependent because of model ambiguity. Multiple physical models and parameter sets can reproduce the same measured transfer characteristics, while local fitting alone cannot uniquely identify the underlying device physics. We present the first demonstration of an agentic TCAD calibration workflow for a fabricated bottom-gate In--W--O (BG-IWO) transistor. Starting from the measured transfer curve and device information, the workflow uses measurement--TCAD residuals and local sensitivity tests to select bounded parameter corrections or evaluate additional physical models, and accept only updates that improve device metrics. The LLM agent orchestrates the workflow, while Sentaurus governs the device physics. For the 2\%-W reference device, five agent-suggested updates yield a fixed calibrated model, reducing the multi-metric device objective $J$ by 14.3$\times$. Maximum $V_{\mathrm{th}}$/$I_{\mathrm{on}}$ errors are 36.1~mV/0.022 decade for varying-drain-bias tests and 46.2~mV/0.062 decade for varying-channel-length tests, demonstrating model transferability across bias and geometry rather than a local parameter fit. W-composition tests provide process-sensitive insight. This agentic workflow provides a faster route to model development for emerging device technologies.

Preprint. 8 pages, 6 figures. Submitted to an IEEE journal for review

Instrumentation and Detectors (physics.ins-det); Artificial Intelligence (cs.AI); Machine Learning (cs.LG); Applied Physics (physics.app-ph)

arXiv:2609.12184 [physics.ins-det]

(or arXiv:2609.12184v1 [physics.ins-det] for this version)

https://doi.org/10.48550/arXiv.2609.12184 Focus to learn more arXiv-issued DOI via DataCite (pending registration)

arXivLabs is a framework that allows collaborators to develop and share new arXiv features directly on our website.

Both individuals and organizations that work with arXivLabs have embraced and accepted our values of openness, community, excellence, and user data privacy. arXiv is committed to these values and only works with partners that adhere to them.

Have an idea for a project that will add value for arXiv's community? Learn more about arXivLabs.

analiza aiqbench

Agentic TCAD Calibration Workflow for Oxide Semiconductor Transistors

Subiecte conexe